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Dielectric Ultracapacitors Based on Ferroelectric Thin Film Heterostructures

Dielectric Ultracapacitors Based on Ferroelectric Thin Film Heterostructures

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When Mar 27, 2018
from 11:30 am to 12:30 pm
Speaker Jun Ouyang Ph.D.
Speaker Information National Institute of Standards and Technology
Where 1311 HN
Contact Name Yuhang Ren
Contact Email
Contact Phone 212-772-5258
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ABSTRACT:

Finding an ultimate device solution for both high density storage and rapid supply of electricity is an emergent problem in the fast-growing field of energy science and technology.  Compared with batteries, fuel cells and electrochemical supercapacitors, dielectric capacitors excel in specific power, compactness and cost-effectiveness, but lag behind in energy density.  Here I will present our recent work in "dielectric ultracapacitors" based on ferroelectric thin film heterostructures, which have demonstrated very high energy densities (up to ~166 J/cm3) and efficiencies (up to 96%), as well as superior stabilities over a broad range of electric fields, frequencies and temperatures.  The boosted energy performance of these ferroelectric capacitors can be attributed to an adaptive nano-domain structure.  The talk will end with a discussion of associated nanoengineering methods, and an outlook of ongoing work for deployment of these ultracapacitor structures in Si-technologies.

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